Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PSMN1R5-30YLC,115
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RFQ
2,950
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Nexperia USA Inc. MOSFET N-CH 30V 100A LFPAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 179W (Tc) N-Channel - 30V 100A (Tc) 1.55 mOhm @ 25A, 10V 1.95V @ 1mA 65nC @ 10V 4044pF @ 15V 4.5V, 10V ±20V
IPC100N04S51R9ATMA1
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RFQ
1,007
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Infineon Technologies N-CHANNEL_30/40V Automotive, AEC-Q101, OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8-34 100W (Tc) N-Channel - 40V 100A (Tc) 1.9 mOhm @ 50A, 10V 3.4V @ 50µA 65nC @ 10V 3770pF @ 25V 7V, 10V ±20V
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