Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SSM6J502NU,LF(T
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RFQ
1,759
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Toshiba Semiconductor and Storage MOSFET P CH 20V 6A 2-2AA1A U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1W (Ta) P-Channel - 20V 6A (Ta) 23.1 mOhm @ 4A, 4.5V 1V @ 1mA 24.8nC @ 4.5V 1800pF @ 10V 1.5V, 4.5V ±8V
SSM3J130TU,LF
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RFQ
3,124
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 4.4A UFM U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) P-Channel - 20V 4.4A (Ta) 25.8 mOhm @ 4A, 4.5V 1V @ 1mA 24.8nC @ 4.5V 1800pF @ 10V 1.5V, 4.5V ±8V
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