Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQD7N10LTM
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RFQ
1,035
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ON Semiconductor MOSFET N-CH 100V 5.8A DPAK QFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 25W (Tc) N-Channel - 100V 5.8A (Tc) 350 mOhm @ 2.9A, 10V 2V @ 250µA 6nC @ 5V 290pF @ 25V 5V, 10V ±20V
FQT7N10LTF
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RFQ
3,785
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ON Semiconductor MOSFET N-CH 100V 1.7A SOT-223 QFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2W (Tc) N-Channel - 100V 1.7A (Tc) 350 mOhm @ 850mA, 10V 2V @ 250µA 6nC @ 5V 290pF @ 25V 5V, 10V ±20V
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