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- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,826
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Vishay Siliconix | MOSFET N-CH 30V 1.3A SOT563F | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 236mW (Ta) | N-Channel | 30V | - | 93 mOhm @ 1.3A, 10V | 3V @ 250µA | 8.3nC @ 10V | 280pF @ 15V | 4.5V, 10V | ±20V | ||
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1,950
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.4A TSM | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 30V | 2.4A (Ta) | 117 mOhm @ 1A, 10V | - | 2.5nC @ 15V | 280pF @ 15V | 4V, 10V | ±20V | ||
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1,956
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|
Toshiba Semiconductor and Storage | MOSFET P CH 30V 4A SOT-23F | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | 30V | 4A (Ta) | 71 mOhm @ 3A, 10V | 2V @ 100µA | 5.9nC @ 10V | 280pF @ 15V | 4V, 10V | ±20V | ||
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1,605
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|
Toshiba Semiconductor and Storage | MOSFET P-CHANNEL 30V 2A UFM | U-MOSII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | 30V | 2A (Ta) | 117 mOhm @ 1A, 10V | 2.6V @ 1mA | - | 280pF @ 15V | 4V, 10V | ±20V |
