- Manufacture :
- Series :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,457
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Texas Instruments | MOSFET P-CH 20V 48A 6SON | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | - | 6-WDFN Exposed Pad | 6-WSON (2x2) | 2.9W (Ta) | P-Channel | 20V | 20A (Ta) | 23.9 mOhm @ 5A, 4.5V | 1.1V @ 250µA | 4.7nC @ 4.5V | 655pF @ 10V | 1.8V, 4.5V | ±8V | ||
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2,965
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Nexperia USA Inc. | MOSFET N-CH 20V SOT23 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 490mW (Ta), 5W (Tc) | N-Channel | 20V | 4.2A (Ta) | 32 mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 11nC @ 4.5V | 655pF @ 10V | 1.2V, 4.5V | ±12V |
