Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TSM1N45CW RPG
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RFQ
3,787
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Taiwan Semiconductor Corporation MOSFET N-CH 450V 500MA SOT223 - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Tc) N-Channel - 450V 500mA (Tc) 4.25 Ohm @ 250mA, 10V 4.25V @ 250µA 6.5nC @ 10V 235pF @ 25V 10V ±30V
FQD2N60CTM
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RFQ
1,594
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ON Semiconductor MOSFET N-CH 600V 1.9A DPAK QFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 44W (Tc) N-Channel - 600V 1.9A (Tc) 4.7 Ohm @ 950mA, 10V 4V @ 250µA 12nC @ 10V 235pF @ 25V 10V ±30V
FQD2N60CTM-WS
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RFQ
2,680
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ON Semiconductor MOSFET N-CH 600V 1.9A QFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 44W (Tc) N-Channel - 600V 1.9A (Tc) 4.7 Ohm @ 950mA, 10V 4V @ 250µA 12nC @ 10V 235pF @ 25V 10V ±30V
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