Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NTB60N06T4G
GET PRICE
RFQ
3,958
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 60V 60A D2PAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 2.4W (Ta), 150W (Tj) N-Channel - 60V 60A (Ta) 14 mOhm @ 30A, 10V 4V @ 250µA 81nC @ 10V 3220pF @ 25V 10V ±20V
IRF7241TRPBF
GET PRICE
RFQ
3,479
Ships today + free overnight shipping
Infineon Technologies MOSFET P-CH 40V 6.2A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 40V 6.2A (Ta) 41 mOhm @ 6.2A, 10V 3V @ 250µA 80nC @ 10V 3220pF @ 25V 4.5V, 10V ±20V
Page 1 / 1