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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PSMN102-200Y,115
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Nexperia USA Inc. MOSFET N-CH 200V 21.5A LFPAK TrenchMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 113W (Tc) N-Channel - 200V 21.5A (Tc) 102 mOhm @ 12A, 10V 4V @ 1mA 30.7nC @ 10V 1568pF @ 30V 10V ±20V
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