- Part Status :
- Vce(on) (Max) @ Vge, Ic :
- Td (on/off) @ 25°C :
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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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2,082
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Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | Active | Bulk | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 595W | T-MAX™ [B2] | - | 134A | 650V | NPT | 2.4V @ 15V, 70A | 280A | - | 305nC | 18ns/170ns | 433V, 70A, 4.3 Ohm, 15V | |||
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2,839
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Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | Active | Bulk | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 543W | T-MAX™ [B2] | 80ns | 118A | 650V | NPT | 2.4V @ 15V, 45A | 224A | - | 203nC | 15ns/100ns | 433V, 45A, 4.3 Ohm, 15V | |||
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1,909
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Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Obsolete | Bulk | - | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 595W | T-MAX™ [B2] | - | 134A | 650V | NPT | 2.4V @ 15V, 70A | 260A | - | 305nC | 19ns/170ns | 433V, 70A, 4.3 Ohm, 15V | |||
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685
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Microsemi Corporation | IGBT 650V 208A 892W T-MAX | - | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 892W | T-MAX™ [B2] | - | 208A | 650V | NPT | 2.4V @ 15V, 95A | 400A | 3.12mJ (on), 2.55mJ (off) | 420nC | 29ns/226ns | 433V, 95A, 4.3 Ohm, 15V |
