Power - Max :
Supplier Device Package :
Voltage - Collector Emitter Breakdown (Max) :
IGBT Type :
Vce(on) (Max) @ Vge, Ic :
Current - Collector Pulsed (Icm) :
Gate Charge :
Td (on/off) @ 25°C :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package Reverse Recovery Time (trr) Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) IGBT Type Vce(on) (Max) @ Vge, Ic Current - Collector Pulsed (Icm) Switching Energy Gate Charge Td (on/off) @ 25°C Test Condition
APT25GP90BDQ1G
Per Unit
$8.75
RFQ
3,045
Ships today + free overnight shipping
Microsemi Corporation IGBT 900V 72A 417W TO247 POWER MOS 7® Not For New Designs Tube Standard -55°C ~ 150°C (TJ) Through Hole TO-247-3 417W TO-247 [B] - 72A 900V PT 3.9V @ 15V, 25A 110A 370µJ (off) 110nC 13ns/55ns 600V, 40A, 4.3 Ohm, 15V
HGTG27N120BN
Per Unit
$6.15
RFQ
1,416
Ships today + free overnight shipping
ON Semiconductor IGBT 1200V 72A 500W TO247 - Active Tube Standard -55°C ~ 150°C (TJ) Through Hole TO-247-3 500W TO-247 - 72A 1200V NPT 2.7V @ 15V, 27A 216A 2.2mJ (on), 2.3mJ (off) 270nC 24ns/195ns 960V, 27A, 3 Ohm, 15V
APT25GP90BG
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RFQ
1,893
Ships today + free overnight shipping
Microsemi Corporation IGBT 900V 72A 417W TO247 POWER MOS 7® Active Tube Standard -55°C ~ 150°C (TJ) Through Hole TO-247-3 417W TO-247 [B] - 72A 900V PT 3.9V @ 15V, 25A 110A 370µJ (off) 110nC 13ns/55ns 600V, 25A, 5 Ohm, 15V
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