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5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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2,839
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Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | Active | Bulk | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 543W | T-MAX™ [B2] | 80ns | 118A | 650V | NPT | 2.4V @ 15V, 45A | 224A | - | 203nC | 15ns/100ns | 433V, 45A, 4.3 Ohm, 15V | |||
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1,002
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Microsemi Corporation | IGBT 1200V 96A 543W TO247 | POWER MOS 7® | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 543W | TO-247 [B] | - | 96A | 1200V | PT | 3.9V @ 15V, 35A | 140A | 750µJ (on), 680µJ (off) | 150nC | 16ns/94ns | 600V, 35A, 5 Ohm, 15V | |||
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853
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Microsemi Corporation | IGBT 600V 100A 543W TO247 | POWER MOS 7® | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 543W | TO-247 [B] | - | 100A | 600V | PT | 2.7V @ 15V, 40A | 160A | 385µJ (on), 352µJ (off) | 135nC | 20ns/64ns | 400V, 40A, 5 Ohm, 15V | ||
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2,148
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Microsemi Corporation | IGBT 900V 100A 543W TO247 | POWER MOS 7® | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 543W | TO-247 [B] | - | 100A | 900V | PT | 3.9V @ 15V, 40A | 160A | 825µJ (off) | 145nC | 16ns/75ns | 600V, 40A, 5 Ohm, 15V | |||
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3,883
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Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | Obsolete | Bulk | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 543W | TO-247 | 80ns | 118A | 650V | NPT | 2.4V @ 15V, 45A | 224A | - | 203nC | 15ns/100ns | 433V, 45A, 4.3 Ohm, 15V |
