- Series :
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10 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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1,618
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Microsemi Corporation | IGBT 1200V 69A 417W TO247 | POWER MOS 7® | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 [B] | - | 69A | 1200V | PT | 3.9V @ 15V, 25A | 90A | 500µJ (on), 438µJ (off) | 110nC | 12ns/70ns | 600V, 25A, 5 Ohm, 15V | ||||
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3,045
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Microsemi Corporation | IGBT 900V 72A 417W TO247 | POWER MOS 7® | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 [B] | - | 72A | 900V | PT | 3.9V @ 15V, 25A | 110A | 370µJ (off) | 110nC | 13ns/55ns | 600V, 40A, 4.3 Ohm, 15V | ||||
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2,451
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Microsemi Corporation | IGBT 1200V 69A 417W TO247 | POWER MOS 7® | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 [B] | - | 69A | 1200V | PT | 3.9V @ 15V, 25A | 90A | 500µJ (on), 440µJ (off) | 110nC | 12ns/70ns | 600V, 25A, 5 Ohm, 15V | ||||
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1,893
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Microsemi Corporation | IGBT 900V 72A 417W TO247 | POWER MOS 7® | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 [B] | - | 72A | 900V | PT | 3.9V @ 15V, 25A | 110A | 370µJ (off) | 110nC | 13ns/55ns | 600V, 25A, 5 Ohm, 15V | |||
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2,293
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ON Semiconductor | IGBT 600V 50A TO247 | - | Active | Tube | Standard | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247-3 | 94ns | 100A | 650V | Trench Field Stop | 2V @ 15V, 50A | 200A | 1.5mJ (on), 460µJ (off) | 220nC | 100ns/237ns | 400V, 50A, 10 Ohm, 15V | ||||
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2,353
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ON Semiconductor | IGBT 600V 50A TO247 | - | Active | Tube | Standard | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247-3 | 94ns | 100A | 600V | Trench Field Stop | 2V @ 15V, 50A | 200A | 1.5mJ (on), 460µJ (off) | 220nC | 100ns/237ns | 400V, 50A, 10 Ohm, 15V | ||||
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3,787
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ON Semiconductor | IGBT 50A 600V TO-247 | - | Active | Tube | Standard | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247-3 | 94ns | 100A | 600V | Trench | 2V @ 15V, 50A | 200A | 1.5mJ (on), 460µJ (off) | 220nC | 100ns/237ns | 400V, 50A, 10 Ohm, 15V | ||||
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2,473
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Alpha & Omega Semiconductor Inc. | IGBT 600V 120A 417W TO247 | Alpha IGBT™ | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 | 137ns | 120A | 600V | - | 2.4V @ 15V, 60A | 210A | 3.1mJ (on), 730µJ (off) | 75nC | 32ns/74ns | 400V, 60A, 5 Ohm, 15V | ||||
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731
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ON Semiconductor | IGBT 600V 80A 417W TO247 | - | Active | Tube | Standard | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 | 73ns | 80A | 600V | Trench Field Stop | 2.61V @ 15V, 40A | 160A | 1.17mJ (on), 280µJ (off) | 228nC | 98ns/213ns | 400V, 40A, 10 Ohm, 15V | ||||
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887
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ON Semiconductor | IGBT 1200V 64A 417W TO247 | - | Active | Tube | Standard | - | Through Hole | TO-247-3 | 417W | TO-247 | - | 64A | 1200V | NPT | 3.2V @ 15V, 40A | 160A | 2.3mJ (on), 1.1mJ (off) | 220nC | 15ns/110ns | 600V, 40A, 5 Ohm, 15V |