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2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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2,676
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Microsemi Corporation | IGBT 600V 100A 543W D3PAK | POWER MOS 7® | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | 543W | D3 [S] | - | 100A | 600V | PT | 2.7V @ 15V, 40A | 160A | 385µJ (on), 352µJ (off) | 135nC | 20ns/64ns | 400V, 40A, 5 Ohm, 15V | |||
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2,224
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Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | - | Obsolete | Bulk | Standard | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 543W | D3Pak | 80ns | 118A | 650V | NPT | 2.4V @ 15V, 45A | 224A | - | 203nC | 15ns/100ns | 433V, 45A, 4.3 Ohm, 15V |
