Power - Max :
Supplier Device Package :
Reverse Recovery Time (trr) :
Voltage - Collector Emitter Breakdown (Max) :
Vce(on) (Max) @ Vge, Ic :
Current - Collector Pulsed (Icm) :
Td (on/off) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package Reverse Recovery Time (trr) Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) IGBT Type Vce(on) (Max) @ Vge, Ic Current - Collector Pulsed (Icm) Switching Energy Gate Charge Td (on/off) @ 25°C Test Condition
FGL35N120FTDTU
Per Unit
$9.00
RFQ
3,550
Ships today + free overnight shipping
ON Semiconductor IGBT 1200V 70A 368W TO264 - Active Tube Standard -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA 368W TO-264 337ns 70A 1200V Trench Field Stop 2.2V @ 15V, 35A 105A 2.5mJ (on), 1.7mJ (off) 210nC 34ns/172ns 600V, 35A, 10 Ohm, 15V
IXBF50N360
Per Unit
$49.19
RFQ
3,507
Ships today + free overnight shipping
IXYS IGBT 3600V 70A 290W I4-PAK BIMOSFET™ Active Tube Standard -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 (3 Leads) 290W ISOPLUS i4-PAC™ 1.7µs 70A 3600V - 2.9V @ 15V, 50A 420A - 210nC 46ns/205ns 960V, 50A, 5 Ohm, 15V
Page 1 / 1