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2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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1,909
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Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Obsolete | Bulk | - | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 595W | T-MAX™ [B2] | - | 134A | 650V | NPT | 2.4V @ 15V, 70A | 260A | - | 305nC | 19ns/170ns | 433V, 70A, 4.3 Ohm, 15V | |||
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2,103
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|
Infineon Technologies | IGBT 600V 47A 206W TO220 | Obsolete | Tube | Standard | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | 206W | TO-220 Full Pack | 100ns | 47A | 600V | NPT | 1.95V @ 15V, 18A | 54A | 95µJ (on), 350µJ (off) | 35nC | 40ns/105ns | 400V, 18A, 22 Ohm, 15V |
