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2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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2,188
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Microsemi Corporation | IGBT 600V 65A 290W TO-247 | POWER MOS 8™ | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 290W | TO-247 [B] | - | 65A | 600V | PT | 2.5V @ 15V, 20A | 109A | 307µJ (on), 254µJ (off) | 18nC | 16ns/122ns | 400V, 20A, 10 Ohm, 15V | |||
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2,975
Ships today + free overnight shipping
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Microsemi Corporation | IGBT 600V 65A 290W TO-247 | POWER MOS 8™ | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 290W | TO-247 [B] | - | 65A | 600V | PT | 2.5V @ 15V, 20A | 109A | 307µJ (on), 254µJ (off) | 102nC | 16ns/122ns | 400V, 20A, 10 Ohm, 15V |
