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| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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Microsemi Corporation | IGBT 600V 121A 520W TO-247 | POWER MOS 8™ | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 520W | TO-247 [B] | - | 121A | 600V | PT | 2.5V @ 15V, 40A | 202A | 715µJ (on), 607µJ (off) | 298nC | 21ns/133ns | 400V, 40A, 4.7 Ohm, 15V |
