- Manufacture :
- Series :
- Supplier Device Package :
- Vce(on) (Max) @ Vge, Ic :
- Td (on/off) @ 25°C :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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1,705
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Microsemi Corporation | IGBT 600V 100A 625W TO247 | POWER MOS 7® | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 625W | TO-247 [B] | 100A | 600V | PT | 2.7V @ 15V, 50A | 190A | 465µJ (on), 637µJ (off) | 165nC | 19ns/83ns | 400V, 50A, 5 Ohm, 15V | |||
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1,111
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Microsemi Corporation | IGBT 600V 100A 463W TO247 | POWER MOS 7® | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 463W | TO-247 [B] | 100A | 600V | PT | 2.7V @ 15V, 30A | 100A | 260µJ (on), 250µJ (off) | 90nC | 13ns/55ns | 400V, 30A, 5 Ohm, 15V | |||
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3,045
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Microsemi Corporation | IGBT 900V 72A 417W TO247 | POWER MOS 7® | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 [B] | 72A | 900V | PT | 3.9V @ 15V, 25A | 110A | 370µJ (off) | 110nC | 13ns/55ns | 600V, 40A, 4.3 Ohm, 15V | |||
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3,142
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Microsemi Corporation | IGBT 900V 43A 250W TO247 | POWER MOS 7® | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 250W | TO-247 [B] | 43A | 900V | PT | 3.9V @ 15V, 15A | 60A | 200µJ (off) | 60nC | 9ns/33ns | 600V, 15A, 4.3 Ohm, 15V | |||
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2,253
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Microsemi Corporation | IGBT 600V 56A 250W TO247 | - | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 250W | TO-247 | 56A | 600V | PT | 2.7V @ 15V, 15A | 65A | 130µJ (on), 121µJ (off) | 55nC | 8ns/29ns | 400V, 15A, 5 Ohm, 15V | |||
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2,588
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Microsemi Corporation | IGBT 600V 56A 250W TO247 | POWER MOS 7® | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 250W | TO-247 [B] | 56A | 600V | PT | 2.7V @ 15V, 15A | 65A | 130µJ (on), 121µJ (off) | 55nC | 8ns/29ns | 400V, 15A, 5 Ohm, 15V | |||
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3,547
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Microsemi Corporation | IGBT 600V 56A 250W TO247 | POWER MOS 7® | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 250W | TO-247 [B] | 56A | 600V | PT | 2.7V @ 15V, 15A | 65A | 130µJ (on), 120µJ (off) | 55nC | 8ns/29ns | 400V, 15A, 5 Ohm, 15V | |||
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1,900
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Microsemi Corporation | IGBT 600V 100A 463W TO247 | POWER MOS 7® | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 463W | TO-247 [B] | 100A | 600V | PT | 2.7V @ 15V, 30A | 120A | 260µJ (on), 250µJ (off) | 90nC | 13ns/55ns | 400V, 30A, 5 Ohm, 15V | |||
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1,708
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IXYS | IGBT 300V 223W TO247 | GenX3™ | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 223W | TO-247AD (IXGH) | - | 300V | PT | 1.85V @ 15V, 42A | 250A | 120µJ (on), 150µJ (off) | 76nC | 21ns/113ns | 200V, 21A, 10 Ohm, 15V |
