- Part Status :
- Voltage - Supply :
- Current - Peak Output (Source, Sink) :
- Rise / Fall Time (Typ) :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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3,568
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Infineon Technologies | IC DRIVER HI/LO SIDE 600V 14-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2.5A, 2.5A | 600V | 25ns, 17ns | |||
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2,554
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Infineon Technologies | IC DRIVER HI/LO SIDE 600V 14-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600V | 75ns, 35ns | |||
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606
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Infineon Technologies | IC MOSFET DVR HI/LO SIDE 14-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP | 3.3 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 600V | 25ns, 17ns | |||
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2,293
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Infineon Technologies | IC MOSFET DVR HI/LO SIDE 14-DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600V | 80ns, 40ns | |||
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3,417
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Infineon Technologies | IC MOSFET DRVR HI/LO SIDE 14-DIP | - | Obsolete | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP | 3.3 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 600V | 25ns, 17ns | ||
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GET PRICE |
3,104
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Infineon Technologies | IC MOSFET DRVR HI/LO SIDE 14-DIP | - | Obsolete | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600V | 80ns, 40ns | ||
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1,140
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IXYS Integrated Circuits Division | IC GATE DRVR 600V HI/LO 14DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel, P-Channel MOSFET | 6V, 9.5V | 2A, 2A | 600V | 9.4ns, 9.7ns |
