DMN2013UFX-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

10A (Ta)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual) Common Drain

Gate Charge (Qg) (Max) @ Vgs :

57.4nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds :

2607pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-VFDFN Exposed Pad

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

780mW

Rds On (Max) @ Id, Vgs :

11.5 mOhm @ 8.5A, 4.5V

Series :

-

Supplier Device Package :

W-DFN5020-6

Vgs(th) (Max) @ Id :

1.1V @ 250µA