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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 20pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 5µA @ 400V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -65°C ~ 150°C
- Package / Case :
- DO-214AC, SMA
- Packaging :
- Cut Tape (CT)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 50ns
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- SMA
- Voltage - DC Reverse (Vr) (Max) :
- 400V
- Voltage - Forward (Vf) (Max) @ If :
- 1.3V @ 1A
- Datasheet :
- US1G-13-F
Cross References
-
Stock 3,478
-
Stock 1,259
-
Stock 739
-
Stock 3,584
-
Stock 2,297
PEOPLE WHO BOUGHT Diodes - Rectifiers - Single ALSO BOUGHT
-
Stock 1,123
-
Stock 3,567
-
Stock 3,083
-
Stock 1,803
-
Stock 924
PEOPLE VIEWING US1G-13-F THEN BOUGHT
-
Stock 1,400
-
Stock 922
-
Stock 3,740
-
Stock 3,973
-
Stock 3,049
Lastest News
05/13/2019
05/13/2019
05/09/2019
Search Part Number: "US1G" Included word is 15
| Part Number | Manufacturer | Stock | Description |
|---|---|---|---|
| US1GHE3/5AT | Vishay Semiconductor Diodes Division | 3,478 | DIODE GEN PURP 400V 1A DO214AC |
| US1GHE3/5AT | Vishay Semiconductor Diodes Division | 1,259 | DIODE GEN PURP 400V 1A DO214AC |
| US1GHE3/5AT | Vishay Semiconductor Diodes Division | 739 | DIODE GEN PURP 400V 1A DO214AC |
| US1GHE3/61T | Vishay Semiconductor Diodes Division | 3,584 | DIODE GEN PURP 400V 1A DO214AC |
| US1GHE3/61T | Vishay Semiconductor Diodes Division | 2,297 | DIODE GEN PURP 400V 1A DO214AC |
| US1GHE3/61T | Vishay Semiconductor Diodes Division | 1,300 | DIODE GEN PURP 400V 1A DO214AC |
| US1G-13 | Diodes Incorporated | 3,424 | DIODE GEN PURP 400V 1A SMA |
| US1G-13 | Diodes Incorporated | 3,749 | DIODE GEN PURP 400V 1A SMA |
| US1G-13 | Diodes Incorporated | 2,673 | DIODE GEN PURP 400V 1A SMA |
| US1G-M3/61T | Vishay Semiconductor Diodes Division | 1,194 | DIODE GEN PURP 400V 1A DO214AC |
| US1G-M3/5AT | Vishay Semiconductor Diodes Division | 3,877 | DIODE GEN PURP 400V 1A DO214AC |
| US1GHR3G | Taiwan Semiconductor Corporation | 2,203 | DIODE GEN PURP 400V 1A DO214AC |
| US1G/1 | Vishay Semiconductor Diodes Division | 1,982 | DIODE GEN PURP 400V 1A DO214AC |
| US1G M2G | Taiwan Semiconductor Corporation | 2,190 | DIODE GEN PURP 400V 1A DO214AC |
| US1GWF-7 | Diodes Incorporated | 3,520 | DIODE GEN PURP 400V 1A SOD123F |
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