BSO615NGHUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

2.6A

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

2W

Rds On (Max) @ Id, Vgs :

150 mOhm @ 2.6A, 4.5V

Series :

SIPMOS®

Supplier Device Package :

PG-DSO-8

Vgs(th) (Max) @ Id :

2V @ 20µA