BSZ105N04NSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A (Ta), 40A (Tc)

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

2.1W (Ta), 35W (Tc)

Rds On (Max) @ Id, Vgs :

10.5 mOhm @ 20A, 10V

Series :

OptiMOS™

Supplier Device Package :

PG-TSDSON-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 14µA