IPB017N08N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

120A (Tc)

Drain to Source Voltage (Vdss) :

80V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

223nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

16900pF @ 40V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

375W (Tc)

Rds On (Max) @ Id, Vgs :

1.7 mOhm @ 100A, 10V

Series :

OptiMOS™

Supplier Device Package :

D²PAK (TO-263AB)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.8V @ 280µA