IPB180P04P4L02ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

180A (Tc)

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

286nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

18700pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-7, D²Pak (6 Leads + Tab)

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

150W (Tc)

Rds On (Max) @ Id, Vgs :

2.4 mOhm @ 100A, 10V

Series :

OptiMOS™

Supplier Device Package :

PG-TO263-7-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2.2V @ 410µA