IPB60R385CPATMA1

MANUFACTURER
Infineon Technologies
PRODUCT CATEGORY
Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 9A TO-263

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
9A (Tc)
Drain to Source Voltage (Vdss) :
600V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
790pF @ 100V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging :
Digi-Reel®
Part Status :
Discontinued at Digi-Key
Power Dissipation (Max) :
83W (Tc)
Rds On (Max) @ Id, Vgs :
385 mOhm @ 5.2A, 10V
Series :
CoolMOS™
Supplier Device Package :
PG-TO263-3-2
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3.5V @ 340µA
Datasheet :
IPB60R385CPATMA1

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Part Number Manufacturer Stock Description
IPB60R250CPATMA1 Infineon Technologies 3,305 MOSFET N-CH 650V 12A TO263-3
IPB60R520CPATMA1 Infineon Technologies 3,443 MOSFET N-CH 600V 6.8A TO-263
IPB60R520CPATMA1 Infineon Technologies 3,977 MOSFET N-CH 600V 6.8A TO-263
IPB60R520CPATMA1 Infineon Technologies 2,133 MOSFET N-CH 600V 6.8A TO-263
IPB60R600CPATMA1 Infineon Technologies 1,119 MOSFET N-CH 600V 6.1A TO263
IPB60R600CPATMA1 Infineon Technologies 728 MOSFET N-CH 600V 6.1A TO263
IPB60R600CPATMA1 Infineon Technologies 3,270 MOSFET N-CH 600V 6.1A TO263
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IPB65R190CFDAATMA1 Infineon Technologies 2,827 MOSFET N-CH TO263-3
IPB60R280P6ATMA1 Infineon Technologies 2,696 MOSFET N-CH TO263-3
IPB65R660CFDAATMA1 Infineon Technologies 3,597 MOSFET N-CH TO263-3
IPB65R380C6ATMA1 Infineon Technologies 3,486 MOSFET N-CH 650V 10.6A TO263
IPB65R380C6ATMA1 Infineon Technologies 1,509 MOSFET N-CH 650V 10.6A TO263
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IPB60R330P6ATMA1 Infineon Technologies 3,564 MOSFET N-CH TO263-3

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