IPD530N15N3GBTMA1

MANUFACTURER
Infineon Technologies
PRODUCT CATEGORY
Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 21A TO252-3

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
21A (Tc)
Drain to Source Voltage (Vdss) :
150V
Drive Voltage (Max Rds On, Min Rds On) :
8V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
887pF @ 75V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging :
Tape & Reel (TR)
Part Status :
Obsolete
Power Dissipation (Max) :
68W (Tc)
Rds On (Max) @ Id, Vgs :
53 mOhm @ 18A, 10V
Series :
OptiMOS™
Supplier Device Package :
PG-TO252-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 35µA
Datasheet :
IPD530N15N3GBTMA1

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