IPT020N10N3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

300A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

156nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerSFN

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

375W (Tc)

Rds On (Max) @ Id, Vgs :

2 mOhm @ 150A, 10V

Series :

OptiMOS™

Supplier Device Package :

PG-HSOF-8-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 272µA