IRF6662TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8.3A (Ta), 47A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

DirectFET™ Isometric MZ

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

2.8W (Ta), 89W (Tc)

Rds On (Max) @ Id, Vgs :

22 mOhm @ 8.2A, 10V

Series :

HEXFET®

Supplier Device Package :

DIRECTFET™ MZ

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.9V @ 100µA