IRFHM8363TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

11A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1165pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerVDFN

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power - Max :

2.7W

Rds On (Max) @ Id, Vgs :

14.9 mOhm @ 10A, 10V

Series :

HEXFET®

Supplier Device Package :

8-PQFN (3.3x3.3), Power33

Vgs(th) (Max) @ Id :

2.35V @ 25µA