IXTA3N100D2HV

Manufacturer :

IXYS

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3A (Tj)

Drain to Source Voltage (Vdss) :

1000V

Drive Voltage (Max Rds On, Min Rds On) :

0V

FET Feature :

Depletion Mode

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

37.5nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Packaging :

-

Part Status :

Active

Power Dissipation (Max) :

125W (Tc)

Rds On (Max) @ Id, Vgs :

6 Ohm @ 1.5A, 0V

Series :

-

Supplier Device Package :

TO-263HV

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 250µA