1214-110M

Manufacturer :

Microsemi Corporation

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

8A

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Frequency - Transition :

1.2GHz ~ 1.4GHz

Gain :

7.4dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C (TJ)

Package / Case :

55KT

Packaging :

Bulk

Part Status :

Active

Power - Max :

270W

Series :

-

Supplier Device Package :

55KT

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

75V