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- Manufacturer :
- Microsemi Corporation
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 1.2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 420mA, 5V
- Frequency - Transition :
- 3.7GHz
- Gain :
- 6dB ~ 6.3dB
- Mounting Type :
- Chassis Mount
- Noise Figure (dB Typ @ f) :
- -
- Operating Temperature :
- 200°C (TJ)
- Package / Case :
- 55BT
- Packaging :
- Bulk
- Part Status :
- Active
- Power - Max :
- 9W
- Series :
- -
- Supplier Device Package :
- 55BT
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 22V
- Datasheet :
- 23A025
PEOPLE WHO BOUGHT Transistors - Bipolar (BJT) - RF ALSO BOUGHT
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Stock 1,871
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Stock 2,979
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Stock 1,560
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Stock 3,231
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Stock 1,151
PEOPLE VIEWING 23A025 THEN BOUGHT
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Stock 3,534
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Stock 2,229
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Stock 2,800
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Stock 1,896
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Stock 2,346
Lastest News
05/13/2019
05/13/2019
05/09/2019
Search Part Number: "23A0" Included word is 15
| Part Number | Manufacturer | Stock | Description |
|---|---|---|---|
| 23A017 | Microsemi Corporation | 3,263 | TRANSISTOR |
| 23A008 | Microsemi Corporation | 1,446 | TRANS RF BIPO 5W 400MA55BT2 |
| 23A005 | Microsemi Corporation | 3,967 | TRANS RF BIPO 3W 400MA 55BT2 |
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