2N4261UB

Manufacturer :

Microsemi Corporation

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

30mA

Current - Collector Cutoff (Max) :

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA, 1V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 200°C (TJ)

Package / Case :

3-SMD, No Lead

Packaging :

Bulk

Part Status :

Active

Power - Max :

200mW

Series :

-

Supplier Device Package :

UB

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

350mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

15V