PDTA123ET,215

Manufacturer :

Nexperia USA Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA, 5V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

250mW

Resistor - Base (R1) :

2.2 kOhms

Resistor - Emitter Base (R2) :

2.2 kOhms

Series :

-

Supplier Device Package :

TO-236AB (SOT23)

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50V