PMV35EPER

Manufacturer :

Nexperia USA Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.3A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

19.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

793pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

480mW (Ta), 1.2W (Tc)

Rds On (Max) @ Id, Vgs :

45 mOhm @ 4.2A, 10V

Series :

-

Supplier Device Package :

TO-236AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA