BFT25,215

Manufacturer :

NXP USA Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

6.5mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1mA, 1V

Frequency - Transition :

2.3GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

5.5dB @ 500MHz

Operating Temperature :

175°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

30mW

Series :

-

Supplier Device Package :

TO-236AB (SOT23)

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

5V