PHD108NQ03LT,118

Manufacturer :

NXP USA Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

75A (Tc)

Drain to Source Voltage (Vdss) :

25V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

16.3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1375pF @ 12V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

187W (Tc)

Rds On (Max) @ Id, Vgs :

6 mOhm @ 25A, 10V

Series :

TrenchMOS™

Supplier Device Package :

DPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 1mA