PMDPB95XNE,115

MANUFACTURER
NXP USA Inc.
PRODUCT CATEGORY
Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 2.4A HUSON6

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Manufacturer :
NXP USA Inc.
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
2.4A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
143pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
6-UDFN Exposed Pad
Packaging :
Cut Tape (CT)
Part Status :
Obsolete
Power - Max :
475mW
Rds On (Max) @ Id, Vgs :
120 mOhm @ 2A, 4.5V
Series :
-
Supplier Device Package :
DFN2020-6
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Datasheet :
PMDPB95XNE,115

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Part Number Manufacturer Stock Description
PMDPB95XNE,115 NXP USA Inc. 3,689 MOSFET 2N-CH 30V 2.4A HUSON6
PMDPB95XNE,115 NXP USA Inc. 2,923 MOSFET 2N-CH 30V 2.4A HUSON6
PMDPB70EN,115 Nexperia USA Inc. 3,992 MOSFET 2N-CH 30V 3.5A 6DFN
PMDPB70EN,115 Nexperia USA Inc. 2,214 MOSFET 2N-CH 30V 3.5A 6DFN
PMDPB70EN,115 Nexperia USA Inc. 1,742 MOSFET 2N-CH 30V 3.5A 6DFN
PMDPB56XN,115 NXP USA Inc. 3,210 MOSFET 2N-CH 30V 3.1A HUSON6
PMDPB56XN,115 NXP USA Inc. 953 MOSFET 2N-CH 30V 3.1A HUSON6
PMDPB56XN,115 NXP USA Inc. 3,035 MOSFET 2N-CH 30V 3.1A HUSON6
PMDPB42UN,115 NXP USA Inc. 2,301 MOSFET 2N-CH 20V 3.9A HUSON6
PMDPB42UN,115 NXP USA Inc. 2,410 MOSFET 2N-CH 20V 3.9A HUSON6
PMDPB42UN,115 NXP USA Inc. 833 MOSFET 2N-CH 20V 3.9A HUSON6
PMDPB38UNE,115 NXP USA Inc. 1,269 MOSFET 2N-CH 20V 4A HUSON6
PMDPB38UNE,115 NXP USA Inc. 659 MOSFET 2N-CH 20V 4A HUSON6
PMDPB38UNE,115 NXP USA Inc. 3,017 MOSFET 2N-CH 20V 4A HUSON6
PMDPB28UN,115 NXP USA Inc. 786 MOSFET 2N-CH 20V 4.6A HUSON6

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