PMN20EN,115

Manufacturer :

NXP USA Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6.7A (Tj)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

18.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SC-74, SOT-457

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

545mW (Ta)

Rds On (Max) @ Id, Vgs :

20 mOhm @ 6.7A, 10V

Series :

-

Supplier Device Package :

6-TSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA