BAS16TT1G

MANUFACTURER
ON Semiconductor
PRODUCT CATEGORY
Diodes - Rectifiers - Single
Description
DIODE GEN PURP 100V 200MA SC75

NO PRICE

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Manufacturer :
ON Semiconductor
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
2pF @ 0V, 1MHz
Current - Average Rectified (Io) :
200mA (DC)
Current - Reverse Leakage @ Vr :
1µA @ 75V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
SC-75, SOT-416
Packaging :
Digi-Reel®
Part Status :
Active
Reverse Recovery Time (trr) :
6ns
Series :
-
Speed :
Small Signal =< 200mA (Io), Any Speed
Supplier Device Package :
SC-75, SOT-416
Voltage - DC Reverse (Vr) (Max) :
100V
Voltage - Forward (Vf) (Max) @ If :
1.25V @ 150mA
Datasheet :
BAS16TT1G

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Search Part Number: "BAS1" Included word is 15

Part Number Manufacturer Stock Description
BAS16E6393HTSA1 Infineon Technologies 1,608 DIODE GP 80V 250MA SOT23-3
BAS16J/ZLX Nexperia USA Inc. 1,493 DIODE GEN PURP 100V 250MA SC90
BAS16J/ZLF Nexperia USA Inc. 2,237 DIODE GEN PURP 100V 250MA SC90
BAS1602WH6327XTSA1 Infineon Technologies 2,264 DIODE GEN PURP 80V 200MA SCD80-2
BAS1602WH6327XTSA1 Infineon Technologies 1,784 DIODE GEN PURP 80V 200MA SCD80-2
BAS1602WH6327XTSA1 Infineon Technologies 1,404 DIODE GEN PURP 80V 200MA SCD80-2
BAS116T,115 NXP USA Inc. 2,604 DIODE GEN PURP 75V 215MA SC75
BAS116T,115 NXP USA Inc. 2,239 DIODE GEN PURP 75V 215MA SC75
BAS116T,115 NXP USA Inc. 1,531 DIODE GEN PURP 75V 215MA SC75
BAS16WE6327HTSA1 Infineon Technologies 2,630 DIODE GEN PURP 80V 250MA SOT323
BAS16WE6327HTSA1 Infineon Technologies 2,580 DIODE GEN PURP 80V 250MA SOT323
BAS16WE6327HTSA1 Infineon Technologies 2,666 DIODE GEN PURP 80V 250MA SOT323
BAS19-7 Diodes Incorporated 1,941 DIODE GP 100V 200MA SOT23-3
BAS19-7 Diodes Incorporated 2,802 DIODE GP 100V 200MA SOT23-3
BAS16WE6433HTMA1 Infineon Technologies 1,627 DIODE GEN PURP 80V 250MA SOT323

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