FDN5618P_G

Manufacturer :

ON Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.25A (Ta)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

13.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

500mW (Ta)

Rds On (Max) @ Id, Vgs :

170 mOhm @ 1.25A, 10V

Series :

PowerTrench®

Supplier Device Package :

SuperSOT-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA