FJN3313RBU

Manufacturer :

ON Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA, 5V

Frequency - Transition :

250MHz

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Packaging :

Bulk

Part Status :

Obsolete

Power - Max :

300mW

Resistor - Base (R1) :

2.2 kOhms

Resistor - Emitter Base (R2) :

47 kOhms

Series :

-

Supplier Device Package :

TO-92-3

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50V