NTMD6601NR2G

Manufacturer :

ON Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

1.1A

Drain to Source Voltage (Vdss) :

80V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power - Max :

600mW

Rds On (Max) @ Id, Vgs :

215 mOhm @ 2.2A, 10V

Series :

-

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

3V @ 250µA