RGT8NS65DGTL

Manufacturer :

Rohm Semiconductor

Product Category :

Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

8A

Current - Collector Pulsed (Icm) :

12A

Gate Charge :

13.5nC

IGBT Type :

Trench Field Stop

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

65W

Reverse Recovery Time (trr) :

40ns

Series :

-

Supplier Device Package :

LPDS (TO-263S)

Switching Energy :

-

Td (on/off) @ 25°C :

17ns/69ns

Test Condition :

400V, 4A, 50 Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 4A

Voltage - Collector Emitter Breakdown (Max) :

650V