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- Manufacturer :
- Taiwan Semiconductor Corporation
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 41pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 3A
- Current - Reverse Leakage @ Vr :
- 10µA @ 300V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AA, SMB
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 35ns
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-214AA (SMB)
- Voltage - DC Reverse (Vr) (Max) :
- 300V
- Voltage - Forward (Vf) (Max) @ If :
- 1.13V @ 3A
- Datasheet :
- ES3FB R5G
Cross References
-
Stock 2,887
-
Stock 916
-
Stock 1,744
-
Stock 627
-
Stock 1,582
PEOPLE WHO BOUGHT Diodes - Rectifiers - Single ALSO BOUGHT
-
Stock 1,123
-
Stock 3,567
-
Stock 3,083
-
Stock 1,803
-
Stock 924
PEOPLE VIEWING ES3FB R5G THEN BOUGHT
-
Stock 992
-
Stock 689
-
Stock 1,751
-
Stock 2,489
-
Stock 1,098
Lastest News
05/13/2019
05/13/2019
05/09/2019
Search Part Number: "ES3F" Included word is 15
Part Number | Manufacturer | Stock | Description |
---|---|---|---|
ES3FHE3/57T | Vishay Semiconductor Diodes Division | 2,887 | DIODE GEN PURP 300V 3A DO214AB |
ES3FHE3/9AT | Vishay Semiconductor Diodes Division | 916 | DIODE GEN PURP 300V 3A DO214AB |
ES3FHE3_A/I | Vishay Semiconductor Diodes Division | 1,744 | DIODE GEN PURP 300V 3A DO214AB |
ES3F V7G | Taiwan Semiconductor Corporation | 627 | DIODE GEN PURP 300V 3A DO214AB |
ES3F R7G | Taiwan Semiconductor Corporation | 1,582 | DIODE GEN PURP 300V 3A DO214AB |
ES3FHE3_A/H | Vishay Semiconductor Diodes Division | 3,485 | DIODE GEN PURP 300V 3A DO214AB |
ES3FHM6G | Taiwan Semiconductor Corporation | 3,584 | DIODE GEN PURP 300V 3A DO214AB |
ES3F-E3/9AT | Vishay Semiconductor Diodes Division | 3,331 | DIODE GEN PURP 300V 3A DO214AB |
ES3F V6G | Taiwan Semiconductor Corporation | 2,543 | DIODE GEN PURP 300V 3A DO214AB |
ES3F M6G | Taiwan Semiconductor Corporation | 648 | DIODE GEN PURP 300V 3A DO214AB |
ES3FBHM4G | Taiwan Semiconductor Corporation | 1,608 | DIODE GEN PURP 300V 3A DO214AA |
ES3FB M4G | Taiwan Semiconductor Corporation | 782 | DIODE GEN PURP 300V 3A DO214AA |
ES3FHR7G | Taiwan Semiconductor Corporation | 2,417 | DIODE GEN PURP 300V 3A DO214AB |
ES3F-M3/57T | Vishay Semiconductor Diodes Division | 853 | DIODE GEN PURP 300V 3A DO214AB |
ES3F-M3/9AT | Vishay Semiconductor Diodes Division | 3,943 | DIODE GEN PURP 300V 3A DO214AB |
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