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- Manufacturer :
- Taiwan Semiconductor Corporation
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 78pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 12A
- Current - Reverse Leakage @ Vr :
- 1µA @ 1000V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AB, SMC
- Packaging :
- Cut Tape (CT)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-214AB (SMC)
- Voltage - DC Reverse (Vr) (Max) :
- 1000V
- Voltage - Forward (Vf) (Max) @ If :
- 1.1V @ 12A
- Datasheet :
- S12MCHR7G
Cross References
-
Stock 3,949
-
Stock 3,828
-
Stock 3,594
-
Stock 760
-
Stock 3,421
PEOPLE WHO BOUGHT Diodes - Rectifiers - Single ALSO BOUGHT
-
Stock 1,123
-
Stock 3,567
-
Stock 3,083
-
Stock 1,803
-
Stock 924
PEOPLE VIEWING S12MCHR7G THEN BOUGHT
-
Stock 992
-
Stock 689
-
Stock 1,751
-
Stock 2,489
-
Stock 1,098
Lastest News
05/13/2019
05/13/2019
05/09/2019
Search Part Number: "S12M" Included word is 15
Part Number | Manufacturer | Stock | Description |
---|---|---|---|
S12MD3 | Sharp Microelectronics | 3,949 | OPTOISOLATOR 1.5KV SCR 8DIP |
S12ME1FY | Sharp Microelectronics | 3,828 | OPTOISOLATOR 4KV SCR 6DIP |
S12MR | GeneSiC Semiconductor | 3,594 | DIODE GEN PURP REV 1KV 12A DO4 |
S12MC V6G | Taiwan Semiconductor Corporation | 760 | DIODE GEN PURP 12A DO214AB |
S12M | GeneSiC Semiconductor | 3,421 | DIODE GEN PURP 1000V 12A DO4 |
S12MC M6G | Taiwan Semiconductor Corporation | 2,657 | DIODE GEN PURP 12A DO214AB |
S12MCHM6G | Taiwan Semiconductor Corporation | 1,184 | DIODE GEN PURP 12A DO214AB |
S12MCHR7G | Taiwan Semiconductor Corporation | 2,208 | DIODE GEN PURP 1KV 12A DO214AB |
S12MCHR7G | Taiwan Semiconductor Corporation | 1,511 | DIODE GEN PURP 1KV 12A DO214AB |
S12MC R7G | Taiwan Semiconductor Corporation | 2,360 | DIODE GEN PURP 1KV 12A DO214AB |
S12MC R7G | Taiwan Semiconductor Corporation | 3,609 | DIODE GEN PURP 1KV 12A DO214AB |
S12MC R7G | Taiwan Semiconductor Corporation | 2,225 | DIODE GEN PURP 1KV 12A DO214AB |
S12MC V7G | Taiwan Semiconductor Corporation | 1,600 | DIODE GEN PURP 1KV 12A DO214AB |
S12MC V7G | Taiwan Semiconductor Corporation | 2,052 | DIODE GEN PURP 1KV 12A DO214AB |
S12MC V7G | Taiwan Semiconductor Corporation | 3,157 | DIODE GEN PURP 1KV 12A DO214AB |
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