S12MCHR7G

MANUFACTURER
Taiwan Semiconductor Corporation
PRODUCT CATEGORY
Diodes - Rectifiers - Single
Description
DIODE GEN PURP 1KV 12A DO214AB
Per Unit
$0.51

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Manufacturer :
Taiwan Semiconductor Corporation
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
78pF @ 4V, 1MHz
Current - Average Rectified (Io) :
12A
Current - Reverse Leakage @ Vr :
1µA @ 1000V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-214AB, SMC
Packaging :
Cut Tape (CT)
Part Status :
Active
Reverse Recovery Time (trr) :
-
Series :
-
Speed :
Fast Recovery = 200mA (Io)
Supplier Device Package :
DO-214AB (SMC)
Voltage - DC Reverse (Vr) (Max) :
1000V
Voltage - Forward (Vf) (Max) @ If :
1.1V @ 12A
Datasheet :
S12MCHR7G

Cross References

  • Sharp Microelectronics
    OPTOISOLATOR 1.5KV SCR 8DIP
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  • Sharp Microelectronics
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  • GeneSiC Semiconductor
    DIODE GEN PURP REV 1KV 12A DO4
    Stock 3,594
  • Taiwan Semiconductor Corporation
    DIODE GEN PURP 12A DO214AB
    Stock 760
  • GeneSiC Semiconductor
    DIODE GEN PURP 1000V 12A DO4
    Stock 3,421

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Search Part Number: "S12M" Included word is 15

Part Number Manufacturer Stock Description
S12MD3 Sharp Microelectronics 3,949 OPTOISOLATOR 1.5KV SCR 8DIP
S12ME1FY Sharp Microelectronics 3,828 OPTOISOLATOR 4KV SCR 6DIP
S12MR GeneSiC Semiconductor 3,594 DIODE GEN PURP REV 1KV 12A DO4
S12MC V6G Taiwan Semiconductor Corporation 760 DIODE GEN PURP 12A DO214AB
S12M GeneSiC Semiconductor 3,421 DIODE GEN PURP 1000V 12A DO4
S12MC M6G Taiwan Semiconductor Corporation 2,657 DIODE GEN PURP 12A DO214AB
S12MCHM6G Taiwan Semiconductor Corporation 1,184 DIODE GEN PURP 12A DO214AB
S12MCHR7G Taiwan Semiconductor Corporation 2,208 DIODE GEN PURP 1KV 12A DO214AB
S12MCHR7G Taiwan Semiconductor Corporation 1,511 DIODE GEN PURP 1KV 12A DO214AB
S12MC R7G Taiwan Semiconductor Corporation 2,360 DIODE GEN PURP 1KV 12A DO214AB
S12MC R7G Taiwan Semiconductor Corporation 3,609 DIODE GEN PURP 1KV 12A DO214AB
S12MC R7G Taiwan Semiconductor Corporation 2,225 DIODE GEN PURP 1KV 12A DO214AB
S12MC V7G Taiwan Semiconductor Corporation 1,600 DIODE GEN PURP 1KV 12A DO214AB
S12MC V7G Taiwan Semiconductor Corporation 2,052 DIODE GEN PURP 1KV 12A DO214AB
S12MC V7G Taiwan Semiconductor Corporation 3,157 DIODE GEN PURP 1KV 12A DO214AB

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