TSM4N60ECH C5G

Manufacturer :

Taiwan Semiconductor Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

545pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Packaging :

Tube

Part Status :

Active

Power Dissipation (Max) :

86.2W (Tc)

Rds On (Max) @ Id, Vgs :

2.5 Ohm @ 2A, 10V

Series :

-

Supplier Device Package :

TO-251 (IPAK)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250µA