CSD16322Q5C

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

21A (Ta), 97A (Tc)

Drain to Source Voltage (Vdss) :

25V

Drive Voltage (Max Rds On, Min Rds On) :

3V, 8V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1365pF @ 12.5V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Packaging :

Cut Tape (CT)

Part Status :

Not For New Designs

Power Dissipation (Max) :

3.1W (Ta)

Rds On (Max) @ Id, Vgs :

5 mOhm @ 20A, 8V

Series :

NexFET™

Supplier Device Package :

8-SON

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+10V, -8V

Vgs(th) (Max) @ Id :

1.4V @ 250µA