CSD25304W1015

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3A (Ta)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

595pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-UFBGA, DSBGA

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

750mW (Ta)

Rds On (Max) @ Id, Vgs :

32.5 mOhm @ 1.5A, 4.5V

Series :

NexFET™

Supplier Device Package :

6-DSBGA

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.15V @ 250µA